PART |
Description |
Maker |
CY7C1305BV25 CY7C1305BV25-100BZC CY7C1305BV25-167B |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture From old datasheet system
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CYPRESS[Cypress Semiconductor]
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CY7C1305AV25 CY7C1305AV25-133BZC CY7C1305AV25-167 |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM) Architecture 18-MBIT BURST OF 4 PIPELINED SRAM WITH QDR ARCHITECTURE
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CYPRESS[Cypress Semiconductor]
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CY7C1305BV18-100BZC CY7C1305BV18-133BZC CY7C1305BV |
18-Mbit Burst of 4 Pipelined SRAM with QD(TM)Architecture 18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
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Cypress Semiconductor
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CAT64LC40ZJ CAT64LC40ZS CAT64LC40J-TE7 CAT64LC40J- |
72-Mbit QDR-II SRAM 2-Word Burst Architecture 72-Mbit QDR-II SRAM 4-Word Burst Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 72-Mbit QDR-II™ SRAM 2-Word Burst Architecture SPI串行EEPROM 72-Mbit QDR™-II SRAM 2-Word Burst Architecture
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Analog Devices, Inc.
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CY7C1303BV25-167BZC |
18-Mbit Burst of Two-Pipelined SRAM with QDRArchitecture
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Cypress
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CY7C1305BV25-167BZI CY7C1305BV25-167BZXC CY7C1305B |
18-Mbit Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
CY7C1305BV25-133BZC CY7C1307BV25-133BZC CY7C1307BV |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor Corp.
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IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
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IDT http:// Integrated Device Technology, Inc.
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IDT71V3558SA133PFGI IDT71V3558SA100BGG IDT71V3558S |
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/3.3V I/O 128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O/ Burst Counter Pipelined Outputs 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PQFP100 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.3V的I / O的脉冲计数器输出流水 TV 6C 6#12 SKT WALL RECP Circular Connector; No. of Contacts:41; Series:D38999; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:21; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41
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IDT Integrated Device Technology, Inc.
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IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O 3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165 SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
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IDT Integrated Device Technology, Inc.
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M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package 512兆位(x16插槽,多银行,多层次,多突发28兆位闪存(突发)移动存储芯片.8V电源,多芯片封装
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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IDT71P73204250BQ IDT71P73104250BQ IDT71P73804250BQ |
18Mb Pipelined DDR⑩II SRAM Burst of 4 18Mb Pipelined DDR垄芒II SRAM Burst of 4
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Integrated Device Technology
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